@TechReport{FabbriLimaSilv:1980:ExSpHe,
author = "Fabbri, M. and Lima, I. C. da Cunha and Silva, A. Ferreira da",
title = "Extrinsic specific heat of phosphorus doped silicon",
institution = "Instituto Nacional de Pesquisas Espaciais",
year = "1980",
number = "INPE-1942-RPE/261",
address = "S{\~a}o Jos{\'e} dos Campos",
keywords = "Impurity, disorder, correlation, specific heat.",
abstract = "The theory of Matsubara and Toyozawa developed for impurity bands
in semiconductors is investigated further in order to calculate
the specific heat of Si:P. The effect of correlation as well as
overlap on the electron hopping energy integral is taken into
account via Heitler-London two-particle wave functions. The
calculated specific heat shows good agreement when compared to the
experimental data over a wide range of impurity concentration
around the criticai value for MNM transition. The comparison
between MT and AMO-MT calculations shows a big enhancement due to
electron correlation. The results of the
highly-correlated-electron-gas model and inhomogeneity model are
shown for the sake of comparion.",
copyholder = "SID/SCD",
language = "en",
ibi = "8JMKD3MGP3W34P/3LJEPR5",
url = "http://urlib.net/ibi/8JMKD3MGP3W34P/3LJEPR5",
targetfile = "INPE-1942.pdf",
urlaccessdate = "2024, Apr. 29"
}